Don't mind me. I'm trying to upload a picture to the internet and everything I do it's been washing out the details.
Science and Futurism
- Thread starter Jolly_Green_Giant
- Start date
-
- Tags
- future science theorycrafting
Cool.
I notice from the full rez picture a touch of chromatic aberration on the top left edge of the moon, if I may ask what camera and lens were you using for the shot?
I notice from the full rez picture a touch of chromatic aberration on the top left edge of the moon, if I may ask what camera and lens were you using for the shot?
That's not so much chromatic aberration as it is an artifact from me going in and dodging and burning with lightroom. Bringing the exposure up on the stars is what brought the color out, but of course the moon turned into a lightbulb. If I took the time to really do it right those artifacts shouldn't be there. Blowing out the highlights and raising the exposure shows some really weird patters at high gains. I used a Tamron 70-200mm lens at 200mm and I don't know what aperture I'm at because I use a meta-bones adapter to convert the canon lens to the sony e-mount. Now the adapter can normally ready this stuff but my dumbass didn't clean off my equipment well enough after I got back from the falcon heavy launch so oxidation got the best of the aluminum contact surfaces and thus, it's not reading the aperture. The body is a sony A7RMkii
Interesting post from DARPA.
Artificial intelligence has made great strides, but until now that progress hasn’t extended to the realm of organic chemistry. That changed when researchers supporting our Make-It program taught computers to plan chemical syntheses. Using the Chematica platform, a computer was able to design synthetic pathways to eight structurally diverse targets relevant to medicine. All of these computer-planned routes were then successfully executed in the lab! Not only that, the computer-planned routes yielded improvements and cost-savings over previous approaches or produced targets that had not previously been synthesized.
https://www.sciencedirect.com/…/artic…/pii/S2451929418300639
DARPA’s Make-It program is automating small molecule discovery and synthesis to propel the field of synthetic chemistry beyond conventional batch-based, intuition-driven capabilities. Make-It is developing artificial intelligence-based approaches to plan and optimize synthetic routes, coupled with methods for fully automated synthesis that include algorithms for automation and process control, interconnected fluidic modules for continuous synthesis, and in-line characterization and purification.
Artificial intelligence has made great strides, but until now that progress hasn’t extended to the realm of organic chemistry. That changed when researchers supporting our Make-It program taught computers to plan chemical syntheses. Using the Chematica platform, a computer was able to design synthetic pathways to eight structurally diverse targets relevant to medicine. All of these computer-planned routes were then successfully executed in the lab! Not only that, the computer-planned routes yielded improvements and cost-savings over previous approaches or produced targets that had not previously been synthesized.
https://www.sciencedirect.com/…/artic…/pii/S2451929418300639
DARPA’s Make-It program is automating small molecule discovery and synthesis to propel the field of synthetic chemistry beyond conventional batch-based, intuition-driven capabilities. Make-It is developing artificial intelligence-based approaches to plan and optimize synthetic routes, coupled with methods for fully automated synthesis that include algorithms for automation and process control, interconnected fluidic modules for continuous synthesis, and in-line characterization and purification.
Zero Field Switching (ZFS) Effect in a Nanomagnetic Device
Credit: Gopman/NIST
Illustration of an unexpected phenomenon known as zero field switching (ZFS) that could lead to smaller, lower-power memory and computing devices than presently possible. The image shows a layering of platinum (Pt), tungsten (W), and a cobalt-iron-boron magnet (CoFeB) sandwiched at the ends by gold (Au) electrodes on a silicon (Si) surface. The gray arrows depict the overall direction of electric current injected into the structure at the back of the gold (Au) contact and coming out the front gold contact pad.
The CoFeB layer is a nanometer-thick magnet that stores a bit of data. A “1” corresponds to the CoFeB magnetization pointing up (up arrow), and a “0” represents the magnetization pointing down (down arrow). The “0” or “1” can be read both electrically and optically, as the magnetization changes the reflectivity of light shining on the material through another phenomenon known as the magneto-optical Kerr effect (MOKE).
In the device, electric current can flip the data state between 0 and 1. Previous devices of this type have also required a magnetic field or other more complex measures to change the material’s magnetization. Those earlier devices are not very useful for building stable, non-volatile memory devices.
A breakthrough occurred in a research collaboration between The Johns Hopkins University and NIST. The team discovered that they could flip the CoFeB magnetization in a stable fashion between the 0 and 1 states by sending only electric current through the Pt and W metal layers adjacent to the CoFeB nanomagnet. They did not need a magnetic field. This ZFS (zero-field switching) effect was a surprise and had not been theoretically predicted.
In their work, the researchers created a special kind of electric current known as a “spin” current. The electrons that carry electric current possess a property known as spin which can be imagined as a bar magnet pointing in a specific direction through the electron. Increasingly exploited in the emerging field known as “spintronics,” spin current is simply electric current in which the spins of the electrons are pointing in the same direction. As an electron moves through the material, the interaction between its spin and its motion (called a spin-orbit torque, SOT) creates a spin current where electrons with one spin state move perpendicular to the current in one direction and electrons with the opposite spin state move in the opposite direction. The resulting spins that have moved adjacent to the CoFeB magnetic layer exert a torque on that layer, causing its magnetization to be flipped. Without the spin current the CoFeB magnetization is stable against any fluctuations in current and temperature. This unexpected ZFS effect poses new questions to theorists about the underlying mechanism of the observed SOT-induced switching phenomenon.
Details of the spin-orbit torque are illustrated in the diagram. The purple arrows show the spins of the electrons in each layer. The blue curved arrow shows the direction in which spins of that type are being diverted. (For example, in the W layer, electrons with spin to the left in the x-y plane are diverted to move upward toward the CoFeB and the electron spins to the right are diverted to move down toward the Pt.) Note the electron spins in the Pt with spin to the right (in the x-y plane), however, are diverted to move upward toward the W and the electron spins with spin to the left are diverted to move downward toward the Si. This is opposite to the direction the electron spins in the W are moving, and this is due to differences in the SOT experienced by electrons moving through Pt and those moving through W. In fact, it is this difference in the way the electrons move through each of these two conductors that may be important to enabling the unusual ZFS effect.
The research team, including NIST scientists Daniel Gopman, Robert Shull, and NIST guest researcher Yury Kabanov, and The Johns Hopkins University researchers Qinli Ma, Yufan Li and Professor Chia-Ling Chien, report their findings (link is external) in Physical Review Letters.
Ongoing investigations by the researchers seek to identify other prospective materials that enable zero-field-switching of a single perpendicular nanomagnet, as well as determining how the ZFS behavior changes for nanomagnets possessing smaller lateral sizes and developing the theoretical foundation for this unexpected switching phenomenon.
Paper: Q. Ma, Y. Li, D. B. Gopman, Y. Kabanov, R. D. Shull and C.-L. Chien. Switching a perpendicular ferromagnetic layer by competing spin currents. Physical Review Letters. Published online 16 March 2018. DOI: 10.1103/PhysRevLett.120.117703 (link is external)
Credit: Gopman/NIST
Illustration of an unexpected phenomenon known as zero field switching (ZFS) that could lead to smaller, lower-power memory and computing devices than presently possible. The image shows a layering of platinum (Pt), tungsten (W), and a cobalt-iron-boron magnet (CoFeB) sandwiched at the ends by gold (Au) electrodes on a silicon (Si) surface. The gray arrows depict the overall direction of electric current injected into the structure at the back of the gold (Au) contact and coming out the front gold contact pad.
The CoFeB layer is a nanometer-thick magnet that stores a bit of data. A “1” corresponds to the CoFeB magnetization pointing up (up arrow), and a “0” represents the magnetization pointing down (down arrow). The “0” or “1” can be read both electrically and optically, as the magnetization changes the reflectivity of light shining on the material through another phenomenon known as the magneto-optical Kerr effect (MOKE).
In the device, electric current can flip the data state between 0 and 1. Previous devices of this type have also required a magnetic field or other more complex measures to change the material’s magnetization. Those earlier devices are not very useful for building stable, non-volatile memory devices.
A breakthrough occurred in a research collaboration between The Johns Hopkins University and NIST. The team discovered that they could flip the CoFeB magnetization in a stable fashion between the 0 and 1 states by sending only electric current through the Pt and W metal layers adjacent to the CoFeB nanomagnet. They did not need a magnetic field. This ZFS (zero-field switching) effect was a surprise and had not been theoretically predicted.
In their work, the researchers created a special kind of electric current known as a “spin” current. The electrons that carry electric current possess a property known as spin which can be imagined as a bar magnet pointing in a specific direction through the electron. Increasingly exploited in the emerging field known as “spintronics,” spin current is simply electric current in which the spins of the electrons are pointing in the same direction. As an electron moves through the material, the interaction between its spin and its motion (called a spin-orbit torque, SOT) creates a spin current where electrons with one spin state move perpendicular to the current in one direction and electrons with the opposite spin state move in the opposite direction. The resulting spins that have moved adjacent to the CoFeB magnetic layer exert a torque on that layer, causing its magnetization to be flipped. Without the spin current the CoFeB magnetization is stable against any fluctuations in current and temperature. This unexpected ZFS effect poses new questions to theorists about the underlying mechanism of the observed SOT-induced switching phenomenon.
Details of the spin-orbit torque are illustrated in the diagram. The purple arrows show the spins of the electrons in each layer. The blue curved arrow shows the direction in which spins of that type are being diverted. (For example, in the W layer, electrons with spin to the left in the x-y plane are diverted to move upward toward the CoFeB and the electron spins to the right are diverted to move down toward the Pt.) Note the electron spins in the Pt with spin to the right (in the x-y plane), however, are diverted to move upward toward the W and the electron spins with spin to the left are diverted to move downward toward the Si. This is opposite to the direction the electron spins in the W are moving, and this is due to differences in the SOT experienced by electrons moving through Pt and those moving through W. In fact, it is this difference in the way the electrons move through each of these two conductors that may be important to enabling the unusual ZFS effect.
The research team, including NIST scientists Daniel Gopman, Robert Shull, and NIST guest researcher Yury Kabanov, and The Johns Hopkins University researchers Qinli Ma, Yufan Li and Professor Chia-Ling Chien, report their findings (link is external) in Physical Review Letters.
Ongoing investigations by the researchers seek to identify other prospective materials that enable zero-field-switching of a single perpendicular nanomagnet, as well as determining how the ZFS behavior changes for nanomagnets possessing smaller lateral sizes and developing the theoretical foundation for this unexpected switching phenomenon.
Paper: Q. Ma, Y. Li, D. B. Gopman, Y. Kabanov, R. D. Shull and C.-L. Chien. Switching a perpendicular ferromagnetic layer by competing spin currents. Physical Review Letters. Published online 16 March 2018. DOI: 10.1103/PhysRevLett.120.117703 (link is external)
Zero Field Switching (ZFS) Effect in a Nanomagnetic Device
Credit: Gopman/NIST
Illustration of an unexpected phenomenon known as zero field switching (ZFS) that could lead to smaller, lower-power memory and computing devices than presently possible. The image shows a layering of platinum (Pt), tungsten (W), and a cobalt-iron-boron magnet (CoFeB) sandwiched at the ends by gold (Au) electrodes on a silicon (Si) surface. The gray arrows depict the overall direction of electric current injected into the structure at the back of the gold (Au) contact and coming out the front gold contact pad.
The CoFeB layer is a nanometer-thick magnet that stores a bit of data. A “1” corresponds to the CoFeB magnetization pointing up (up arrow), and a “0” represents the magnetization pointing down (down arrow). The “0” or “1” can be read both electrically and optically, as the magnetization changes the reflectivity of light shining on the material through another phenomenon known as the magneto-optical Kerr effect (MOKE).
In the device, electric current can flip the data state between 0 and 1. Previous devices of this type have also required a magnetic field or other more complex measures to change the material’s magnetization. Those earlier devices are not very useful for building stable, non-volatile memory devices.
A breakthrough occurred in a research collaboration between The Johns Hopkins University and NIST. The team discovered that they could flip the CoFeB magnetization in a stable fashion between the 0 and 1 states by sending only electric current through the Pt and W metal layers adjacent to the CoFeB nanomagnet. They did not need a magnetic field. This ZFS (zero-field switching) effect was a surprise and had not been theoretically predicted.
In their work, the researchers created a special kind of electric current known as a “spin” current. The electrons that carry electric current possess a property known as spin which can be imagined as a bar magnet pointing in a specific direction through the electron. Increasingly exploited in the emerging field known as “spintronics,” spin current is simply electric current in which the spins of the electrons are pointing in the same direction. As an electron moves through the material, the interaction between its spin and its motion (called a spin-orbit torque, SOT) creates a spin current where electrons with one spin state move perpendicular to the current in one direction and electrons with the opposite spin state move in the opposite direction. The resulting spins that have moved adjacent to the CoFeB magnetic layer exert a torque on that layer, causing its magnetization to be flipped. Without the spin current the CoFeB magnetization is stable against any fluctuations in current and temperature. This unexpected ZFS effect poses new questions to theorists about the underlying mechanism of the observed SOT-induced switching phenomenon.
Details of the spin-orbit torque are illustrated in the diagram. The purple arrows show the spins of the electrons in each layer. The blue curved arrow shows the direction in which spins of that type are being diverted. (For example, in the W layer, electrons with spin to the left in the x-y plane are diverted to move upward toward the CoFeB and the electron spins to the right are diverted to move down toward the Pt.) Note the electron spins in the Pt with spin to the right (in the x-y plane), however, are diverted to move upward toward the W and the electron spins with spin to the left are diverted to move downward toward the Si. This is opposite to the direction the electron spins in the W are moving, and this is due to differences in the SOT experienced by electrons moving through Pt and those moving through W. In fact, it is this difference in the way the electrons move through each of these two conductors that may be important to enabling the unusual ZFS effect.
The research team, including NIST scientists Daniel Gopman, Robert Shull, and NIST guest researcher Yury Kabanov, and The Johns Hopkins University researchers Qinli Ma, Yufan Li and Professor Chia-Ling Chien, report their findings (link is external) in Physical Review Letters.
Ongoing investigations by the researchers seek to identify other prospective materials that enable zero-field-switching of a single perpendicular nanomagnet, as well as determining how the ZFS behavior changes for nanomagnets possessing smaller lateral sizes and developing the theoretical foundation for this unexpected switching phenomenon.
Paper: Q. Ma, Y. Li, D. B. Gopman, Y. Kabanov, R. D. Shull and C.-L. Chien. Switching a perpendicular ferromagnetic layer by competing spin currents. Physical Review Letters. Published online 16 March 2018. DOI: 10.1103/PhysRevLett.120.117703 (link is external)
The thing that blows my mind is that this is another awesome discovery "made by accident". Not even theorized, just BAM, new technology.
Indeed. But then again history is littered with such discoveries. In this case I wonder what will come of this one.